PC357N1TJ00F datasheet

Маркировка

PC357N1TJ00F
Производитель

Sharp Microelectronics
Описание

Sharp Microelectronics PC357N1TJ00F Configuration: 1 Current - Dc Forward (if): 50mA Current - Output / Channel: 50mA Current Transfer Ratio: 600 % Current Transfer Ratio (max): 600% @ 5mA Current Transfer Ratio (min): 50% @ 5mA Forward Current: 5 mA Input Type: DC Isolation Voltage: 3750 Vrms Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Collector Current: 50 mA Maximum Collector Emitter Saturation Voltage: 200 mV Maximum Collector Emitter Voltage: 80 V Maximum Fall Time: 18 us Maximum Forward Diode Voltage: 1.4 V Maximum Input Diode Current: 50 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 170 mW Maximum Reverse Diode Voltage: 6 V Maximum Rise Time: 18 us Minimum Operating Temperature: - 30 C Mounting Type: Surface Mount Number Of Channels: 1 Output Device: Transistor Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 200mV Voltage - Isolation: 3750Vrms Voltage - Output: 80V Other Names: 425-2578-2, PC357N1TJ00F
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14 шт.
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